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november 2015 docid026854 rev 2 1 / 20 this is information on a product in full production. www.st.com stb33n60dm2, STP33N60DM2, stw33n60dm2 n - channel 600 v, 0.110 typ., 24 a mdmesh? dm2 power mosfet in d2pak, to - 220 and to - 247 packages datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax. r ds(on) max. i d stb33n60dm2 650 v 0.130 24 a STP33N60DM2 650 v 0.130 24 a stw33n60dm2 650 v 0.130 24 a ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt r uggedness ? zener - protected applications ? switching applications description these high voltage n - channel power mosfets are part of the mdmesh? dm2 fast recovery diode series. they offer very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift converters. table 1: device summary order code marking package packing stb33n60dm2 33n6 0dm2 d2pak tape and reel STP33N60DM2 33n60dm2 to - 220 tube stw33n60dm2 33n60dm2 to - 247 tube
contents stb33n60dm2, STP33N60DM2, stw33n60dm2 2 / 20 docid026854 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 d2pak package information ................................ ............................ 10 4.2 d2pak packing infor mation ................................ ............................. 13 4.3 to - 220 type a package information ................................ ................ 15 4.4 to - 247 package information ................................ ........................... 17 5 revision history ................................ ................................ ............ 19
stb33n60dm2, STP33N60DM2, stw33n60dm2 electrical ratings docid026854 rev 2 3 / 20 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 24 a drain current (continuous) at t case = 100 c 15.5 i dm (1) drain current (pulsed) 96 a p tot total dissipation at t case = 25 c 190 w dv/dt (2) peak diode recovery voltage slope 50 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) pulse width is limited by safe operating area. (2) i sd 24 a, di/dt=900 a/s; v ds peak < v (br)dss , v dd = 400 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit d2pak to - 220 to - 247 r thj - case thermal resistance junction - case 0.66 c/w r thj - pcb thermal resistance junction - pcb (1) 30 r thj - amb thermal resistance junction - ambient 62.5 50 notes: (1) when mounted on 1 inch2 fr - 4, 2 oz copper board. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 5.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 570 mj
electrical characteristics stb33n60dm2, STP33N60DM2, stw33n60dm2 4 / 20 docid026854 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 12 a 0.110 0.130 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1870 - pf c oss output capacitance - 87 - c rss reverse transfer capacitance - 2 - c oss eq. (1) equivalent output capacitance v dd = 480 v, v gs = 0 v - 157 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4.5 - q g total gate charge v dd = 480 v, i d = 24 a, v gs = 10 v (see figure 19: "test circuit for gate charge behavior" and figure 23: "switching time waveform" ) - 43 - nc q gs gate - source charge - 9.8 - q gd gate - drain charge - 21 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 12 a r g = 4.7 , v gs = 10 v (see figure 18: "test circuit for resistive load switching times" and ) - 17 - ns t r rise time - 8 - t d(off) turn - off delay time - 62 - t f fall time - 9 -
stb33n60dm2, STP33N60DM2, stw33n60dm2 electrical characteristics docid026854 rev 2 5 / 20 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 24 a i sdm (1) source - drain current (pulsed) - 96 a v sd (2) forward on voltage v gs = 0 v, i sd = 24 a - 1.6 v t rr reverse recovery time i sd = 24 a, di/dt = 100 a/s, v dd = 60 v (see figure 20: "test circuit for inductive load switching and diode recovery times" ) - 150 ns q rr reverse recovery charge - 0.5 c i rrm reverse recovery current - 8.8 a t rr reverse recovery time i sd = 24 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 20: "test circuit for inductive load switching and diode recovery times" ) - 316 ns q rr reverse recovery charge - 2.85 c i rrm reverse recovery current - 18 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%. table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 250 a, i d = 0 a 30 - - v
electrical characteristics stb33n60dm2, STP33N60DM2, stw33n60dm2 6 / 20 docid026854 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area for d2pak figure 3 : thermal impedance for d2pak figure 4 : safe operating area for to - 220 figure 5 : thermal impedance for to - 220 figure 6 : safe operating area for to - 247 figure 7 : thermal impedance for to - 247 k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02
stb33n60dm2, STP33N60DM2, stw33n60dm2 electrical characteristics docid026854 rev 2 7 / 20 figure 8 : output characteristics figure 9 : transfer characteristics figure 10 : gate charge vs gate - source voltage figure 11 : static drain - source on - resistance figure 12 : capacitance variations figure 13 : normalized gate threshold voltage vs temperature
electrical characteristics stb33n60dm2, STP33N60DM2, stw33n60dm2 8 / 20 docid026854 rev 2 figure 14 : normalized on - resistance vs temperature figure 15 : normalized v(br)dss vs temperature figure 16 : output capacitance stored energy figure 17 : source - drain diode forward characteristics
stb33n60dm2, STP33N60DM2, stw33n60dm2 test circuits docid026854 rev 2 9 / 20 3 test circuits figure 18 : test circuit for resistive load switching times figure 19 : test circuit for gate charge behavior figure 20 : test circuit for inductive load switching and diode recovery times figure 21 : unclamped inductive load test circuit figure 22 : unclamped inductive waveform figure 23 : switching time waveform
package information stb33n60dm2, STP33N60DM2, stw33n60dm2 10 / 20 docid026854 rev 2 4 package information in order to meet environmental requirements, st offers these devices in different grades of ec opack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak package information figure 24 : d2pak (to - 263) type a package outline 0079457_a_rev22
stb33n60dm2, STP33N60DM2, stw33n60dm2 package information docid026854 rev 2 11 / 20 table 10: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
package information stb33n60dm2, STP33N60DM2, stw33n60dm2 12 / 20 docid026854 rev 2 figure 25 : d2pak (to - 263) recommended footprint (dimensions are in mm)
stb33n60dm2, STP33N60DM2, stw33n60dm2 package information docid026854 rev 2 13 / 20 4.2 d2pak packing information figure 26 : tape outline
package information stb33n60dm2, STP33N60DM2, stw33n60dm2 14 / 20 docid026854 rev 2 figure 27 : reel outline table 11: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
stb33n60dm2, STP33N60DM2, stw33n60dm2 package information docid026854 rev 2 15 / 20 4.3 to - 220 type a package information figure 28 : to - 220 type a package outline
package information stb33n60dm2, STP33N60DM2, stw33n60dm2 16 / 20 docid026854 rev 2 table 12: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
stb33n60dm2, STP33N60DM2, stw33n60dm2 package information docid026854 rev 2 17 / 20 4.4 to - 247 package information figure 29 : to - 247 package outline
package information stb33n60dm2, STP33N60DM2, stw33n60dm2 18 / 20 docid026854 rev 2 table 13: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
stb33n60dm2, STP33N60DM2, stw33n60dm2 revision history docid026854 rev 2 19 / 20 5 revision history table 14: document revision history date revision changes 16 - oct - 2014 1 first release. 02 - nov - 2015 2 document status promoted from preliminary to production data. updated title and features in cover page. updated table 2: "absolute maximum ratings" , table 4: "avalanche characteristics" , table 5: "static" , table 6: "dynamic" , table 7: "switching times" and table 8: "source - drain diode" . added section 2.1 electrical characteristics (curves).
stb33n60dm2, STP33N60DM2, stw33n60dm2 20 / 20 docid026854 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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